- gallium arsenide transistor
- арсенид-галиевый транзистор
English-Russian dictionary of telecommunications. 2015.
English-Russian dictionary of telecommunications. 2015.
Gallium arsenide — Gallium arsenide … Wikipedia
gallium-arsenide field-effect transistor — galio arsenido lauko tranzistorius statusas T sritis radioelektronika atitikmenys: angl. gallium arsenide field effect transistor vok. Galiumarsenid Feldeffekttransistor, m rus. полевой транзистор на арсениде галлия, m pranc. transistor à effet… … Radioelektronikos terminų žodynas
Indium gallium arsenide — (InGaAs) is a semiconductor composed of indium, gallium and arsenic. It is used in high power and high frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide.… … Wikipedia
Gallium(III) arsenide — Chembox new Name = Gallium arsenide ImageFile = Gallium arsenide.jpg ImageFile1 = Gallium arsenide unit cell 3D balls.png IUPACName = Gallium arsenide Section1 = Chembox Identifiers CASNo = 1303 00 0 SMILES = Ga#As Section2 = Chembox Properties… … Wikipedia
Transistor — For other uses, see Transistor (disambiguation). Assorted discrete transistors. Packages in order from top to bottom: TO 3, TO 126, TO 92, SOT 23 A transistor is a semiconductor device used to amplify and switch electronic signals and power. It… … Wikipedia
transistor — /tran zis teuhr/, n. 1. Electronics. a semiconductor device that amplifies, oscillates, or switches the flow of current between two terminals by varying the current or voltage between one of the terminals and a third: although much smaller in… … Universalium
Gallium — Infobox galliumGallium (pronEng|ˈgæliəm) is a chemical element that has the symbol Ga and atomic number 31. A soft silvery metallic poor metal, gallium is a brittle solid at low temperatures but liquefies slightly above room temperature and will… … Wikipedia
transistor à effet de champ en arséniure de gallium — galio arsenido lauko tranzistorius statusas T sritis radioelektronika atitikmenys: angl. gallium arsenide field effect transistor vok. Galiumarsenid Feldeffekttransistor, m rus. полевой транзистор на арсениде галлия, m pranc. transistor à effet… … Radioelektronikos terminų žodynas
Heterojunction bipolar transistor — The heterojunction bipolar transistor (HBT) is a type of bipolar junction transistor (BJT) which uses differing semiconductor materials for the emitter and base regions, creating a heterojunction. The HBT improves on the BJT in that it that can… … Wikipedia
Indium(III) arsenide — Chembox new Name = Indium(III) arsenide ImageFile = Indium(III) arsenide.jpg ImageName = Indium(III) arsenide OtherNames = indium arsenide, indium monoarsenide Section1 = Chembox Identifiers CASNo = 1303 11 3 Section2 = Chembox Properties Formula … Wikipedia
Field-effect transistor — FET redirects here. For other uses, see FET (disambiguation). High power N channel field effect transistor The field effect transistor (FET) is a transistor that relies on an electric field to control the shape and hence the conductivity of a… … Wikipedia